PhD studentship x 2 (Fixed Term)

Cambridge; Cambridge; On-site; GBP 60,000 - 80,000; Full time

Job summary

A leading research university in the UK is offering two PhD studentships focused on the development of ultra-scaled complementary field effect transistors (CFETs) based on atomically thin semiconductors. The positions will be funded for 3.5 years, focusing on optimising semiconductor interfaces and conducting research aligned with next-generation electronics. Applicants should have a relevant Master’s degree and demonstrate research ownership and communication skills. Early applications are encouraged as positions may be filled quickly.

Qualifications

• Candidates should have a strong background in relevant science subjects.
• Previous research experience is advantageous but not mandatory.
• Training will be provided in experimental methods.

Responsibilities

• Develop ultra-scaled CFETs using atomically thin semiconductors.
• Create low-resistance electrical contacts and optimize semiconductor/dielectric interfaces.
• Synthesize wafer scale ATB semiconductors.

Skills

Self-motivation

Effective communication

Ownership of research

Education

Good UK Master's degree or overseas equivalent in Materials Science, Electronic Engineering, or Physics

Job description

# PhD studentship x 2 (Fixed Term)CFETs based on atomically thin semiconductorsLocation: The two PhD studentships will be based at the University of Cambridge in the Department of Materials Science and Metallurgy in 2D Materials and Devices group.Supervisor: Dr Yan WangStipend: Full funding for 3.5 yearsFees: This position is open to UK citizens or overseas students who meet the UK residency requirements (home fees) or are able to augment the funds to cover the extra costs associated with international student fees.Project overview: Modern electronics face challenges in scaling down semiconductor technology, especially as devices approach sub-1-nm technologies. Atomically thin body (ATB) semiconductors such as transition metal dichalcogenide offer a promising solution owing to their ultra-thin channels that enable precise control over electrical current flow. This project plans to develop ultra-scaled complementary field effect transistors (CFETs) using ATB semiconductors. Key activities include creating low-resistance electrical contacts, optimising semiconductor/dielectric interfaces for efficient switching, synthesis of wafer scale ATB semiconductors, and tuning threshold voltages for both n- and p-type transistors. By employing industry-compatible processes, this project aims to pave the way for high-performance, low-power electronics, establishing CFETs as fundamental for next-generation semiconductor technologies.Applicants should have (or expect to be awarded) a good UK Master's degree (or overseas equivalent) in a relevant science subject (Materials Science, Electronic Engineering, Physics) and should be self-motivated, able to take ownership of their research, and effectively communicate their research findings. Training in all experimental methods will be provided in the projects, although relevant previous experience would be advantageous.Applicants are asked to upload the following:1. A short research statement (maximum 1 page) describing the applicant's past research, future goals, and why the applicant is interested and suitable for this position.2. A curriculum vitae.3. A publication list.4. The contact details of two referees that can provide a letter of recommendation for the applicant.Applications for the PhD projects should be submitted via the University Application Portal: . Early applications are encouraged as the positions may be filled once suitable candidates are identified.We reserve the right to fill the position with a qualified candidate prior to the conclusion of the advertising period.Documents in support of applications should include a CV and a research statement.Should you have any queries, please reach out to Yan Wang: [e-mail], with a copy to: [e-mail] and Ana Talaban-Bailey: [e-mail] quote reference LJ48161 on your application and in any correspondence about this vacancy.The University actively supports equality, diversity and inclusion and encourages applications from all sections of society.The University has a responsibility to ensure that all employees are eligible to live and work in the UK.### Department/location### Salary### ReferenceLJ48161### Category### Date published4 December 2025### Closing date5 January 2026