PhD: CFETs in Atomically Thin 2D Semiconductors

Cambridge; Cambridge; On-site; GBP 60,000 - 80,000; Full time

Job summary

A prestigious university in Cambridge is offering a fully funded PhD position focused on developing ultra-scaled complementary field effect transistors (CFETs) from atomically thin semiconductors. Candidates should have a strong background in relevant science fields and be self-motivated researchers. The role includes responsibilities for creating electrical contacts and optimising semiconductor interfaces, with comprehensive training provided. Applications are encouraged early, as the position may be filled before the closing date.

Qualifications

• Applicants should have a good Master's degree in Materials Science, Electronic Engineering, or Physics.
• Self-motivated and able to take ownership of research.
• Effective communication of research findings.

Responsibilities

• Develop ultra-scaled CFETs using atomically thin body semiconductors.
• Create low-resistance electrical contacts for transistors.
• Optimise semiconductor/dielectric interfaces for efficient switching.

Skills

Self-motivated

Research communication

Ownership of research

Education

Good UK Master's degree or overseas equivalent

Job description

A prestigious university in Cambridge is offering a fully funded PhD position focused on developing ultra-scaled complementary field effect transistors (CFETs) from atomically thin semiconductors. Candidates should have a strong background in relevant science fields and be self-motivated researchers. The role includes responsibilities for creating electrical contacts and optimising semiconductor interfaces, with comprehensive training provided. Applications are encouraged early, as the position may be filled before the closing date.