PhD - CFETs based on atomically thin semiconductors

Cambridge; Cambridge; On-site; GBP 60,000 - 80,000; Full time

Job summary

A prestigious university in Cambridge is offering a fully funded PhD position focused on developing ultra-scaled complementary field effect transistors (CFETs) from atomically thin semiconductors. Candidates should have a strong background in relevant science fields and be self-motivated researchers. The role includes responsibilities for creating electrical contacts and optimising semiconductor interfaces, with comprehensive training provided. Applications are encouraged early, as the position may be filled before the closing date.

Qualifications

• Applicants should have a good Master's degree in Materials Science, Electronic Engineering, or Physics.
• Self-motivated and able to take ownership of research.
• Effective communication of research findings.

Responsibilities

• Develop ultra-scaled CFETs using atomically thin body semiconductors.
• Create low-resistance electrical contacts for transistors.
• Optimise semiconductor/dielectric interfaces for efficient switching.

Skills

Self-motivated

Research communication

Ownership of research

Education

Good UK Master's degree or overseas equivalent

Job description

# PhD - CFETs based on atomically thin semiconductorsCFETs based on atomically thin semiconductorsLocation: The two PhD studentships will be based at the University of Cambridge in the Department of Materials Science and Metallurgy in 2D Materials and Devices group.Supervisor: Dr Yan WangStipend: Full funding for 3.5 yearsFees: This position is open to UK citizens or overseas students who meet the UK residency requirements (home fees) or are able to augment the funds to cover the extra costs associated with international student fees.Project overview: Modern electronics face challenges in scaling down semiconductor technology, especially as devices approach sub-1-nm technologies. Atomically thin body (ATB) semiconductors such as transition metal dichalcogenide offer a promising solution owing to their ultra-thin channels that enable precise control over electrical current flow. This project plans to develop ultra-scaled complementary field effect transistors (CFETs) using ATB semiconductors. Key activities include creating low-resistance electrical contacts, optimising semiconductor/dielectric interfaces for efficient switching, synthesis of wafer scale ATB semiconductors, and tuning threshold voltages for both n- and p-type transistors. By employing industry-compatible processes, this project aims to pave the way for high-performance, low-power electronics, establishing CFETs as fundamental for next-generation semiconductor technologies.Applicants should have (or expect to be awarded) a good UK Master's degree (or overseas equivalent) in a relevant science subject (Materials Science, Electronic Engineering, Physics) and should be self-motivated, able to take ownership of their research, and effectively communicate their research findings. Training in all experimental methods will be provided in the projects, although relevant previous experience would be advantageous.Applicants are asked to upload the following:1. A short research statement (maximum 1 page) describing the applicant's past research, future goals, and why the applicant is interested and suitable for this position.2. A curriculum vitae.3. A publication list.4. The contact details of two referees that can provide a letter of recommendation for the applicant.Applications for the PhD projects should be submitted via the University Application Portal: . Early applications are encouraged as the positions may be filled once suitable candidates are identified.We reserve the right to fill the position with a qualified candidate prior to the conclusion of the advertising period.Documents in support of applications should include a CV and a research statement.Should you have any queries, please reach out to Yan Wang: [e-mail], with a copy to: [e-mail] and Ana Talaban-Bailey: [e-mail] quote reference LJ48161 on your application and in any correspondence about this vacancy.The University actively supports equality, diversity and inclusion and encourages applications from all sections of society.The University has a responsibility to ensure that all employees are eligible to live and work in the UK.### Department/location### Salary### ReferenceLJ48161### Category### Date published4 December 2025### Closing date23 January 2026